Charge drain for a MIS device

Details Charge drain for a MIS device Charge drain for a MIS device

1994-08-02

1996-03-05

Ngo/, Nga/ n V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257217, 257249, 257401, H01L 2362, H01L 27148

Patent

active

054970202

ABSTRACT:
A semiconductor device which has a diffusion layer region in a semiconductor body, and a MIS transistor with a gate electrode formed on the semiconductor body that is connected to the diffusion layer region. The semiconductor device is made by the steps of forming a diffusion layer region in the upper layer of the semiconductor body forming a gate electrode on the upper surface of the semiconductor body through a gate insulating film which is connected to the diffusion layer region and forming source and drain regions on the upper layer of the semiconductor body on both sides of the gate electrode so that unnecessary electrical charges on the gate electrode of the MIS transistor and transfer electrodes of the CCD device are removed.

REFERENCES:
patent: 3781574 (1973-12-01), White et al.
patent: 3969744 (1976-07-01), Nicholas et al.
patent: 4432073 (1984-02-01), Masuoka

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