Semiconductor memory device with a capacitor having a protection

Details Semiconductor memory device with a capacitor having a protection Semiconductor memory device with a capacitor having a protection

1994-01-24

1995-03-07

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257532, 257767, H01L 2968, H01L 2978, H01L 2992

Patent

active

053960947

ABSTRACT:
A semiconductor memory device in which a protection layer is disposed between a silicon storage electrode and a tantalum pentoxide dielectric layer. A conductive material having a larger free energy of oxide formation than that of the tantalum pentoxide is used for forming the protection layer. Therefore, no native oxide film is formed at the interface between the storage electrode and the dielectric layer. As a result, the dielectric constant of the dielectric layer does not decrease even when the dielectric layer is a thin film.

REFERENCES:
patent: 5189503 (1993-02-01), Suguro et al.
Hashimoto et al. "Leakage Current Reduction in Thin Ta.sub.2 O.sub.5 Films for High Density VLSI Memories," IEEE Trans. on Elect. Dev. vol. 36, Jan., 1989, pp. 14-18.

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