Method of forming a transistor with an LDD structure

Details Method of forming a transistor with an LDD structure Method of forming a transistor with an LDD structure

1996-03-15

1998-06-23

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438305, 438307, 438308, 438530, H01L 21268, H01L 2184

Patent

active

057704864

ABSTRACT:
A crystalline silicon thin film transistor having an LDD (lightly doped drain) structure and a process for fabricating the same, which comprises establishing an LDD by forming a gate insulating film and a gate electrode on an island-like semiconductor region and implanting thereafter impurities in a self-aligned manner to establish an LDD, anodically oxidizing the gate electrode and introducing impurities to form source and drain regions, partially or wholly removing the anodic oxide from the surface of the island-like semiconductor region to expose the LDD region, and irradiating a laser beam or an intense light having an intensity equivalent to that of the laser beam to activate the impurity region inclusive of the LDD.

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