Stripe geometry semiconductor laser device

Details Stripe geometry semiconductor laser device Stripe geometry semiconductor laser device

1985-04-18

1987-09-15

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

046944605

ABSTRACT:
A stripe geometry semiconductor laser comprising a multi-layered crystal structure having a substrate and an active layer for laser oscillation; an etching blocking layer on said multi-layered crystal structure; and a striped mesa-type multi-layered crystal having a cladding layer, which serves as an electroconductive region, on said etching blocking layer, resulting in a difference in the distribution of the refractive index of light with regard to the active layer between the inside and the outside of said striped mesa-type multi-layered crystal.

REFERENCES:
patent: 4615032 (1986-09-01), Holbrook et al.
I. P. Kaminow et al., "Performance of an Improved InGaAsP Ridge Waveguide Laser at 1-3 mum", Electronics Letters, vol. 17, No. 9, Apr. 1981, pp. 318-320.
I. P. Kaminow et al., "Low-Threshold InGaAsP Ridge Waveguide Lasers at 1.3 mum", IEEE Journal of Quantum Electronics, vol. QE-19, No. 8, Aug. 1983, pp. 1312-1319.
Patent Abstracts of Japan, vol. 5, No. 197, Dec. 15th, 1981.

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