Semiconductor laser array

Details Semiconductor laser array Semiconductor laser array

1985-02-08

1987-09-15

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, 372 46, H01S 319

Patent

active

046944613

ABSTRACT:
A semiconductor laser array includes a p-GaAs substrate, a p-Ga.sub.1-x Al.sub.x As cladding layer, a Ga.sub.1-y Al.sub.y As active layer, an n-Ga.sub.1-z Al.sub.z As optical guide layer, an n-Ga.sub.1-x Al.sub.x As cladding layer and an n-GaAs cap layer formed by the liquid phase epitaxial growth method. A plurality of stripe shaped grooves are formed in the surface of the n-GaAs cap layer so that the bottom of the groove reaches the intermediate of the n-Ga.sub.1-z Al.sub.z As optical guide layer. A Ga.sub.1-b Al.sub.b As high resistance layer is filled in the plurality of stripe shaped grooves so that injecting current is divided into a plurality of paths, and each laser emitting region is optically, phase coupled to each other with a phase difference of zero degree.

REFERENCES:
Blum et al, "Double Heterojunction Laser Arrays", IBM Technical Disclosure Bulletin, vol. 15, No. 7, Dec. 1972.

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