Active solid-state devices (e.g. – transistors – solid-state diode – With specified shape of pn junction
Patent
1995-05-31
1997-05-13
Whitehead, Jr., Carl
Active solid-state devices (e.g., transistors, solid-state diode
With specified shape of pn junction
257654, 257546, H01L 2706, H01L 310352, H01L 2900
Patent
active
056295588
ABSTRACT:
A diode integrated on semiconductor material with BCD technology and of the type provided on a substrate having a first type of conductivity inside an isolation region having a second type of conductivity. The diode comprises also a buried anode region having a first type of conductivity and a cathode region having a second type of conductivity. The cathode region comprises an epitaxial layer located above the buried anode region and a highly doped region provided inside the epitaxial layer. The buried anode region comprises depressions opposite which is located the highly doped region with the depressions being achieved by the intersection of lateral diffusions of distinct and adjacent portions of the buried anode region.
REFERENCES:
Parthasarathy et al., Theoretical and Experimental Investigation of 500V P- and N- Channel VDMOS-LIGBT Transistors, Proceedings of 1995 International Symposium of Power Semiconductor Devices & ICs, pp. 241-246 1995.
Leung et al., Self-Heating Effect in Lateral DMOS on SOI, Proceedings of 1995 International Symposium on Power Semiconductor Devices and ICs, pp. 136-140 1995.
Ludikhuize, A Versatile 700-1200-V IC Process for Analog and Switching Applications, IEEE Transactions on Electron Devices, pp. 1582-1589 Jul. 1991.
Andreini et al., A New Integrated Silicon Gate Technology Combining Bipolar Linear, CMOS Logic, and DMOS Power Parts, IEEE Transactions on Electronic Devices, vol. ED-33, No. 12, pp. 2025-2030 Dec. 1986.
Lin et al., A Novel LDMOS Structure with a Step Gate Oxide, IEDM 95, pp. 38.2.1-38.2.4 1995.
Gallagher, "Italy's SGS Claims Lean in Vertical PNP Devices," Electronics, vol. 59, No. 2, p. 22 (1986).
Galbiati Paola
Mastromatteo Ubaldo
Formby Betty
Groover Robert
Jr. Carl Whitehead
SGS-Thomson Microelectronics, S.rl
LandOfFree
Semiconductor diode integrated with bipolar/CMOS/DMOS technology does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor diode integrated with bipolar/CMOS/DMOS technology, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor diode integrated with bipolar/CMOS/DMOS technology will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1387447