Semiconductor diode with silicide films and trench isolation

Details Semiconductor diode with silicide films and trench isolation Semiconductor diode with silicide films and trench isolation

1995-04-25

1997-05-13

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257356, 257594, 257597, 257601, 257384, H01L 2362

Patent

active

056295448

ABSTRACT:
The invention comprises a diode in a well having trench isolation that has an edge. Both the well contact of the diode and the rectifying contact of the diode are silicided, but the silicide on the rectifying contact is spaced from the trench isolation edge. The spacing is provided by a gate stack or other mask. In one embodiment, the gate stack alone spaces the two diode contacts from each other, eliminating the need for trench isolation therebetween. The structure reduces diode series resistance and silicide junction penetration. It significantly improves heat flow in trench isolation technologies, increasing the level of ESD protection. The invention also comprises an SOI diode having a lightly doped region in the thin layer of semiconductor under a gate stack with an ohmic contact to the lightly doped region self-aligned to an edge of the gate stack.

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Voldman et al., "Mixed-Voltage Interface ESD Protection Circuits For Advanced Microprocessors . . . CMOS Technologies", IEEE, 1994.
Journal of Electrostatics 33, (1994), 327-356 Steven H. Voldman, Vaughn P. Gross no month.
"Silicon-on-Insulator (SOI) by Bonding and Etch-Back", Lasky et al., IEDM, Dec. 1985.

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