Method for producing semiconductor wafers with low light scatter

Details Method for producing semiconductor wafers with low light scatter Method for producing semiconductor wafers with low light scatter

1996-02-27

1997-05-13

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from liquid combined with subsequent diverse...

117 13, 117 34, 148DIG3, 148DIG24, 148DIG127, 438 14, 438795, H01L 21324

Patent

active

056292163

ABSTRACT:
A monitor wafer used to determine the cleanliness of a wafer fabrication environment requires a surface having a minimum of light scattering anomalies so that contamination deposited by the environment is not confused with light scattering anomalies initially on the monitor wafers. In the present invention, ingots of a single-crystal semiconductor are grown at a reduced pull rate and wafers produced from the ingot are annealed within a preferred temperature range that varies with the pull rate to produce wafers having reduced light-scattering anomalies on their surfaces. The number of light-scattering anomalies increases at a slower rate upon repetitive cleaning cycles than does the number of light-scattering anomalies of prior art wafers.

REFERENCES:
patent: 5209811 (1993-05-01), Kitagawara et al.
W. Wijaranakula, "Dissolution kinetics of D defects in Czochralski silicon," Journal of Applied Physics, vol. 75, No. 7, Apr. 1994, pp. 3678-3680.
Ryuta, Jiro, et al., JPN. J. Appl. Phys. vol. 31 (1992) pp. L293-L295.
Ryuta, Jiro, et al., JPN. J. Appl. Phys. vol. 29 (1990) pp. L1947-1949.
E. Biedermann, et al., IBM Tech. Discl. Bulletin 19, 4 (1976)1295. "Producing Si . . . with . . . Surface . . . Free from Defects".

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