Semiconductor device and method for forming the same

Details Semiconductor device and method for forming the same Semiconductor device and method for forming the same

1994-11-30

1999-06-29

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257369, 257349, 257351, H01L 2976

Patent

active

059172215

ABSTRACT:
In a field effect type device having a thin film-like active layer, there is provided a thin film-like semiconductor device including a top side gate electrode on the active layer and a bottom side gate electrode connected to a static potential, the bottom side gate electrode being provided between the active layer and a substrate. The bottom side gate electrode may be electrically connected to only one of a source and a drain of the field effect type device. Also, the production methods therefor are disclosed.

REFERENCES:
patent: 4748485 (1988-05-01), Vasudev
patent: 5034788 (1991-07-01), Kerr
patent: 5103277 (1992-04-01), Caviglia et al.
patent: 5124769 (1992-06-01), Tanaka et al.
patent: 5185535 (1993-02-01), Farb et al.
patent: 5198379 (1993-03-01), Adan
patent: 5294821 (1994-03-01), Iwamatsu
patent: 5475238 (1995-12-01), Hamada

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