Semiconductor devices with pocket implant and counter doping

Details Semiconductor devices with pocket implant and counter doping Semiconductor devices with pocket implant and counter doping

1996-10-03

1999-06-29

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257327, 257345, H01L 2701, H01L 2712, H01L 310397

Patent

active

059172193

ABSTRACT:
A low power transistor (70, 70') formed in a face of a semiconductor layer (86) of a first conductivity type. The transistor includes a source and drain regions (76, 78) of a second conductivity type formed in the face of the semiconductor layer, and a gate (72) insulatively disposed adjacent the face of the semiconductor layer and between the source and drain regions. A layer of counter doping (80, 80') of the second conductivity type is formed adjacent to the face of the semiconductor layer generally between the source and drain regions. A first and second pockets (82, 84, 82', 84') of the first conductivity type may also be formed generally adjacent to the source and drain regions and the counter doped layer (80, 80').

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