Split gate flash memory unit

Details Split gate flash memory unit Split gate flash memory unit

1998-02-26

1999-06-29

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, H01L 2976

Patent

active

059172142

ABSTRACT:
A split gate flash memory unit comprises a silicon substrate; a first insulating layer formed on said silicon substrate; a first conductive layer formed on a part area of said first insulating layer; a second insulating layer formed on left and right sidewalls of said first conductive layer and on another part area of said first insulating layer; a third insulating layer formed on said first conductive layer. The third insulating layer is also formed on said second insulating layer located at said left and right side walls of the first conductive layer in order to reduce an asperity effect on left and right edges of said first conductive layer. A second conductive layer is formed on said second and third insulating layers for being isolated from said first conductive layer by a blocking function of said second and third insulating layer.

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patent: 5330938 (1994-07-01), Camerlenghi
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patent: 5397725 (1995-03-01), Wolstenholme et al.
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patent: 5498559 (1996-03-01), Chang
patent: 5625212 (1997-04-01), Fukumoto
patent: 5665620 (1997-09-01), Nguyen et al.

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