Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-07-06
1994-10-25
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257327, 257330, 257335, 257345, H01L 2910, H01L 2978
Patent
active
053592212
ABSTRACT:
Source and drain regions are formed in first regions of low concentration formed on a surface of a semiconductor surface, and a second region with doping concentration higher than that of the first regions is formed around the first regions. Further in the second region, third regions with doping concentration higher than that of the second region are formed separate from each other. By virtue of this, a rise of the threshold voltage attendant on a decrease of the channel length is canceled out by the third regions and the short channel effect is suppressed. Further, since doping concentration of the first region is low, high carrier mobility can be obtained.
Ishii Tatsuya
Miyamoto Masafumi
Nagai Ryo
Seki Koichi
Carroll J.
Hitachi , Ltd.
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-137680