III-V compound semiconductor device formed on silicon substrate

Details III-V compound semiconductor device formed on silicon substrate III-V compound semiconductor device formed on silicon substrate

1994-11-28

1995-12-05

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

257 18, 257200, 372 48, H01L 2906, H01L 2915

Patent

active

054731747

ABSTRACT:
A buffer layer of a III-V compound semiconductor device grown by depositing III-V compound semiconductor layers on a silicon semiconductor substrate 21 has minimum stress and no dislocation propagation. Periodic recesses are formed on a surface of the silicon semiconductor substrate 21 and a Ga layer 41 and an As layer 61 are formed on opposite side surfaces of each recess, respectively. A GaAs strain superlattice layer 22 thus formed is used as the buffer layer. Dislocation is confined to the buffer layer which can be made thin. Stress and consequent warpage are reduced by the recesses.

REFERENCES:
patent: 4872046 (1989-10-01), Morkoc et al.
patent: 5206877 (1993-04-01), Kahen
patent: 5285086 (1994-02-01), Fitzgerald
Lo et al, Appl. Phys. Lett. 52 (17), 25 Apr. 1988 pp. 1386-1388.
Lin et al, Appl. Phys. Lett. (51) (11) 14 Sep. 1987 pp. 814-816 "Growth in porous silicon".

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