Thin film forming method and apparatus

Details Thin film forming method and apparatus Thin film forming method and apparatus

1995-08-23

1999-06-29

Tung, T.

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

216 37, 216 38, 216 67, 216 68, 216 79, 427569, 427579, 438695, 438697, 438710, 438723, 438724, H01L 2100, H05H 124

Patent

active

059168200

ABSTRACT:
A thin film forming method for forming a thin film on a surface of a substrate having a stepped portion due to a difference in level, includes steps of performing first thin film deposition with plasma generated in a processing chamber by applying high-frequency voltages to electrodes, performing thin film shaping with plasma generated in the processing chamber by applying a high-frequency voltage to a coil, and performing second thin film deposition with plasma generated in the processing chamber by applying high-frequency voltages to the electrodes.

REFERENCES:
patent: 4668365 (1987-05-01), Foster et al.
patent: 4775550 (1988-10-01), Chu et al.
patent: 4795529 (1989-01-01), Kawasaki et al.
patent: 4950624 (1990-08-01), Inuzima et al.
patent: 5026666 (1991-06-01), Hills et al.
patent: 5513765 (1996-05-01), Usui
patent: 5614055 (1997-03-01), Fairbairn et al.
"Review of Inductively Coupled Plasmas for Plasma Processing", by J. Hopwood, Plasma Sources Sci. Technol. 1 (1992), pp. 109-116.

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