Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-01-26
1999-04-06
Crane, Sara
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257351, 257372, 327534, H01L 2972
Patent
active
058922601
ABSTRACT:
In an SOI-type semiconductor device, a power supply voltage is applied to back gates of P-channel MOS transistors in a standby mode, and a voltage lower than the power supply voltage is applied to the back gates of the P-channel MOS transistors in an active mode. A ground voltage is applied to back gates of N-channel MOS transistors in the standby mode, and a voltage higher than the ground voltage is applied to the back gates of the N-channel MOS transistors in an active mode.
REFERENCES:
patent: 5278102 (1994-01-01), Horie
patent: 5473277 (1995-12-01), Furumochi
patent: 5497023 (1996-03-01), Nakazato et al.
patent: 5506540 (1996-04-01), Sakurai et al.
patent: 5557231 (1996-09-01), Yamaguchi et al.
patent: 5610533 (1997-03-01), Arimoto et al.
patent: 5726946 (1998-03-01), Yamagata et al.
European Serch Report.
"CMOS Supply Sequence Circuit"; IBM Technical Disclosure Bulletin, Jun. 1986, (2 pages).
"Bipolar-FET Hybrid-Mode Operation of Quarter-Micrometer SOI MOSFET's," Stephen A. Parke, et al., IEEE Electron Device Letters, vol. 14, No. 5, pp. 234-236, May 1993.
Kurosawa Susumu
Okumura Koichiro
Crane Sara
NEC Corporation
LandOfFree
SOI-type semiconductor device with variable threshold voltages does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with SOI-type semiconductor device with variable threshold voltages, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and SOI-type semiconductor device with variable threshold voltages will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1373851