Process for conductors with selective deposition

Details Process for conductors with selective deposition Process for conductors with selective deposition

1997-04-14

1999-04-06

Tsai, Jey

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438675, 438678, 438641, 438687, 438685, H01L 2144

Patent

active

058918043

ABSTRACT:
This is a method of forming a conductor 26 on an interlevel dielectric layer 12 which is over an electronic microcircuit substrate 10, and the structure produced thereby. The method utilizes: forming an intralevel dielectric layer 14 over the interlevel dielectric layer 12; forming a conductor groove in the intralevel dielectric layer 14 exposing a portion of the interlevel dielectric layer 12; anisotropically depositing a selective deposition initiator 24 onto the intralevel dielectric layer 14 and onto the exposed portion of the interlevel dielectric layer 14; and selectively depositing conductor metal 26 to fill the groove to at least half-full. The selective deposition initiator 24 may selected from the group consisting of tungsten, titanium, paladium, platinum, copper, aluminum, and combinations thereof. In one embodiment, the selective deposition initiator 24 is paladium, and the selectively deposited conductor metal 26 is principally copper.

REFERENCES:
patent: 5116463 (1992-05-01), Lin et al.
patent: 5198389 (1993-03-01), Van Der Putten et al.
patent: 5290733 (1994-03-01), Hayasaka et al.
patent: 5312773 (1994-05-01), Nagashima
patent: 5354712 (1994-10-01), Ho et al.
patent: 5391517 (1995-02-01), Gelatos et al.
patent: 5429989 (1995-07-01), Fiordalice et al.
patent: 5654245 (1997-08-01), Allen

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