Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-09-08
1995-12-12
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257310, 257532, H01L 2702, H01L 2968
Patent
active
054752485
ABSTRACT:
A semiconductor device comprised of a transistor (TR) having a gate electrode, a source region and a drain region, and a ferroelectric capacitor formed above a local oxide film. The capacitor has a ferroelectric film, and upper and lower electrodes that sandwich the film therebetween. The lower electrode and the source region are connected to each other through a wiring or interconnection which is formed of a conductive reaction-preventing film with an Al wiring electrode stacked thereon. The conductive reaction-preventing film is formed of TiN, MoSi, W, etc. If an annealing treatment is carried out for the purpose of improving the characteristics of the semiconductor device or a final protection film is formed after the formation of the wiring electrode, the wiring electrode and the upper electrode do not react with each other. Thus, excellent characteristics of the ferroelectric film are obtained so that a highly integrated ferroelectric memory having high performance can be formed.
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Limanek Robert P.
Manzo Edward D.
Meza Peter J.
Murphy Mark J.
Ramtron International Corporation
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