Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-12-20
1995-12-12
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257 59, 257 72, 257642, 437923, H01L 2710, H01L 2715
Patent
active
054752469
ABSTRACT:
Repair lines in an imager device include protective layers disposed over steps in the repair lines where the repair lines extend over underlying components in the imager array. The protective layers each include a layer of polyimide to provide protection for the step portions of the conductive repair line from etchants and the like to which the conductive line is exposed during fabrication processes for the imager array. The protective layers are disposed over the steps of a conductive line in a repair crossover region so as to provide a repair area free from the protective material of the protective layers disposed thereon in the repair crossover region where the conductive repair line is disposed in vertical alignment with an underlying address line.
REFERENCES:
patent: 4723197 (1988-02-01), Takier et al.
Kwasnick Robert F.
Salisbury Roger S.
Wei Ching-Yeu
Crane Sara W.
General Electric Company
Ingraham Donald S.
Snyder Marvin
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