Method of fabricating semiconductor device and method of process

Details Method of fabricating semiconductor device and method of process Method of fabricating semiconductor device and method of process

1994-07-29

1996-02-20

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437248, 437909, 437174, 148DIG16, 117106, H01L 2184, H01L 21324

Patent

active

054928435

ABSTRACT:
Method of fabricating a semiconductor device. A glass substrate such as Corning 7059 is used as a substrate. A bottom film is formed. Then, the substrate is annealed above the strain point of the glass substrate. The substrate is then slowly cooled below the strain point. Thereafter, a silicon film is formed, and a TFT is formed. The aforementioned anneal and slow cooling reduce shrinkage of the substrate created in later thermal treatment steps. This makes it easy to perform mask alignments. Furthermore, defects due to misalignment of masks are reduced, and the production yield is enhanced. In another method, a glass substrate made of Corning 7059 is also used as a substrate. The substrate is annealed above the strain point. Then, the substrate is rapidly cooled below the strain point. Thereafter, a bottom film is formed, and a TFT is fabricated. The aforementioned anneal and slow cooling reduce shrinkage of the substrate created in later thermal treatment steps. Thus, less cracks are created in the active layer of the TFT and in the bottom film. This improves the production yield. During heating of the substrate, it is held substantially horizontal to reduce warpage, distortions, and waviness of the substrate.

REFERENCES:
patent: 3250605 (1966-05-01), Matsumoto et al.
patent: 4152535 (1979-05-01), Deminet et al.
patent: 4547256 (1985-10-01), Gurtler et al.
patent: 4709466 (1987-12-01), McCandless et al.
patent: 4851363 (1989-07-01), Troxell et al.
patent: 4894080 (1990-01-01), Reese et al.
patent: 4977748 (1990-12-01), Diedrich
patent: 5064775 (1991-11-01), Chang
patent: 5112764 (1992-05-01), Mitra et al.
patent: 5147826 (1992-09-01), Liu et al.
patent: 5252140 (1993-10-01), Kobayashi et al.
patent: 5254208 (1993-10-01), Zhang
patent: 5262654 (1993-11-01), Yamazaki
patent: 5275851 (1994-01-01), Fonash et al.
patent: 5294238 (1994-03-01), Fukada et al.
patent: 5297956 (1994-03-01), Yanabe et al.
patent: 5306651 (1994-04-01), Masumo et al.
patent: 5308998 (1994-05-01), Yamazaki et al.
patent: 5403772 (1995-03-01), Zhang et al.
patent: 5426064 (1995-06-01), Zhang et al.
Translation of JP 2-102150 (Hamano).
Translation of JP 58-114037 (Masumoto).
C. Hayzelden et al., "In Situ Transmission Electron Microscopy Studies of Silicide-Mediated Crystallization of Amorphous Silicon" (3 pages), Appl. Phys. Lett., 60 (1992) 22.5.
A. V. Dvurechenskii et al., "Transport Phenomena in Amorphous Silicon Doped by Ion Implantation of 3d Metals", Akademikian Lavrentev Prospekt pp. 635-640 Phys Stat Sol. A95 (1986).
T. Hempel et al., "Needle-Like Crystallization of Ni Doped Amorphous Silicon Thin Films", Solid State Communications, vol. 85, No. 11, pp. 921-924, 1993.

Affiliated with

Also associated with

Rating

Method of fabricating semiconductor device and method of process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating semiconductor device and method of process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating semiconductor device and method of process will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1355662