Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-03-12
1993-03-23
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257320, 257390, 257622, H01L 2978, H01L 2710, H01L 2906
Patent
active
051967227
ABSTRACT:
A semiconductor device memory array formed on a semiconductor substrate comprising a multiplicity of field effect transistor DRAM devices disposed in array is disclosed. Each of the DRAM devices is paired with a non-volatile EEPROM cell and the EEPROM cells are disposed in a shallow trench in the semiconductor substrate running between the DRAM devices such that each DRAM-EEPROM pair shares a common drain diffusion. The EEPROM cells are arranged in the trench such that there are discontinuous laterally disposed floating gate polysilicon electrodes and continuous horizontally disposed program and recall gate polysilicon electrodes. The floating gate is separated from the program and recall gates by a silicon rich nitride. The array of the invention provides high density shadow RAMs. Also disclosed are methods for the fabrication of devices of the invention.
REFERENCES:
patent: 4375086 (1983-02-01), Van Velthoven
patent: 4471471 (1984-09-01), DiMaria
patent: 4615020 (1986-09-01), Rinerson et al.
patent: 4665417 (1987-05-01), Lam
patent: 4774556 (1988-09-01), Fujii et al.
patent: 4835741 (1989-05-01), Baglee
patent: 4929988 (1990-05-01), Yoshikawa
patent: 4962322 (1990-10-01), Chapman
patent: 4990979 (1991-02-01), Otto
patent: 5017977 (1991-05-01), Richardson
patent: 5049956 (1991-09-01), Yoshida et al.
patent: 5053842 (1991-10-01), Kojima
patent: 5071782 (1991-12-01), Morz
patent: 5078498 (1992-01-01), Kadakia et al.
patent: 5146426 (1992-09-01), Mukherjee et al.
"A 4M Bit NVRAM Technology Using a Novel Stacked Capacitor On Selectively Self-Aligned Flotox Cell Structure" I.E.D.M. 90. 931-933 (1990).
Bergendahl Albert S.
Bertin Claude L.
Cronin John E.
Kalter Howard L.
Kenney Donald M.
International Business Machines - Corporation
Munson Gene M.
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