Method of etching WSi.sub.x films

Details Method of etching WSi.sub.x films Method of etching WSi.sub.x films

1994-05-13

1996-02-20

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566561, 1566571, 15665911, 216 67, 252 791, 437200, H01L 2100

Patent

active

054925975

ABSTRACT:
The present invention teaches a method for etching a tungsten silicide (WSi.sub.x) film overlying a polysilicon film in an enclosed chamber during a semiconductor fabrication process, by the steps of: providing a patterned mask overlying the WSi.sub.x film thereby providing exposed portions of the WSi.sub.x film; presenting an etchant chemistry comprising NF.sub.3 and HeO.sub.2 to the exposed portions of the WSi.sub.x film at a temperature ranging from -20.degree. C. to 100.degree. C., thereby etching away the exposed portions of the WSi.sub.x film and simultaneously etching substantially vertical sidewalls in the WSi.sub.x film, the etching continues into the polysilicon film, thereby forming a WSi.sub.x /polysilicon stack having substantially vertical sidewalls.

REFERENCES:
patent: 5382316 (1995-01-01), Hill et al.
patent: 5387312 (1995-02-01), Keller et al.

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