Method for patterning silicon dioxide with high resolution in th

Details Method for patterning silicon dioxide with high resolution in th Method for patterning silicon dioxide with high resolution in th

1986-03-06

1987-03-24

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156653, 156657, 156651, 156644, 252 795, B44C 122, C03C 1500, C03C 2506

Patent

active

046523340

ABSTRACT:
A method is provided for selectively etching ion-implanted silicon dioxide. A masked silicon dioxide layer is exposed to an ion beam of controlled dose and energy. The mask is removed and the silicon dioxide layer is brought in contact with an aqueous ammoniacal hydrogen peroxide solution which preferentially removes the ion-bombarded region with minimal etching of the unimplanted silicon dioxide.

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patent: 4450041 (1984-05-01), Aklufi
Monfret et al., "Chemical and Electrical Behavior of Ion Implanted SiO.sub.2 Films", Ion Implantation in Semiconductors, 1971, pp. 389-396.
Watanabe et al., "Etching Rates of SiO.sub.2 and Si.sub.3 N.sub.4 Insulating Films in Ammonia-Hydrogen-Peroxide Cleaning Process", Proc. Electro Chem. Soc., 83-8, pp. 488-496, (1983); CA99(20):167899f.

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