Method of depositing high density titanium nitride films on semi

Details Method of depositing high density titanium nitride films on semi Method of depositing high density titanium nitride films on semi

1992-07-14

1993-10-19

Quach, T. N.

Fishing, trapping, and vermin destroying

437245, 4272552, H01L 21283

Patent

active

052544990

ABSTRACT:
Disclosed is a chemical vapor deposition method of providing a conformal layer of TiN atop a semiconductor wafer in a manner which increases density and reduces etch rate of the TiN layer. The method comprises: a) positioning a wafer within a chemical vapor deposition reactor; b) heating the positioned wafer to a selected processing temperature of from about 200.degree. C. to about 600.degree. C.; c) injecting selected quantities of a gaseous titanium organometallic precursor of the formula Ti(NR.sub.2).sub.4, where R is selected from the group consisting of H and a carbon containing radical; gaseous ammonia; and a carrier gas to within the reactor having the positioned preheated wafer therein; and d) maintaining the reactor at a pressure of from about 5 Torr to about 100 Torr and the wafer at a selected elevated temperature which in combination are effective for reacting the precursor and ammonia to deposit a film on the wafer which comprises TiN, the film having increased density and reduced etch rate over films deposited by the same method but at lower than about 5 Torr pressure. Preferably and typically, the resultant film will consist essentially of TiN, with the film having in excess of 99% TiN by volume.

REFERENCES:
patent: 5089438 (1992-02-01), Katz
patent: 5139825 (1992-08-01), Gordon et al.
Ishihara, K., et al., "Characterization of . . . ", Japanese J. Appl. Phys., 29(10), Oct. 1990, pp. 2103-2105.
Katz, A., "The Influence of Ammonia on Rapid-Thermal Low-Pressure Metalorganic Chemical Vapor Deposited TiN.sub.x Films from Tetrakis (dimethylamido) Titanium Precursor Onto InP", J. Appl. Phys., 71(2), Jan. 15, 1992, pp. 993-1000.
Katz, A., Ohmic Contacts to InP-Based Materials Induced by Means of Rapid Thermal Low Pressure (Metallorganic) Chemical Vapor Deposition Technique, May 4, 1991; Journal of Electronic Materials, vol. 20, No. 12, pp. 1069-1073.

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