Method for heat-treating gallium arsenide monocrystals

Details Method for heat-treating gallium arsenide monocrystals Method for heat-treating gallium arsenide monocrystals

1991-12-18

1993-05-11

Maples, John S.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566202, 437248, C30B 3302, C30B 1500

Patent

active

052098117

ABSTRACT:
A heat-treating method for an indium-doped dislocation-free gallium arsenide monocrystal having a low carbon concentration and grown in the Liquid Encapsulated Czochralski method, comprising a two-step heat treatment:

REFERENCES:
patent: 3729348 (1973-04-01), Saul
patent: 4376657 (1983-03-01), Nagasawa et al.
patent: 4851358 (1989-07-01), Huber
patent: 4868133 (1989-09-01), Huber
patent: 4889493 (1989-12-01), Otsuki et al.
patent: 5047370 (1991-09-01), Yamamoto et al.
patent: 5051376 (1991-09-01), Yamada et al.
Patent Abstracts of Japan, vol. 11, No. 200 (C-431) (2647), Jun. 27, 1987.
Patent Abstracts of Japan, vol. 11, No. 267 (C-443) (2714), Aug. 28, 1987.
Patent Abstracts of Japan, vol. 12, No. 5 (C-467) (92852), Jan. 3, 1988.
Journal of Crystal Growth, vol. 76, No. 2, Aug. 1986, pp. 217-232, X. McGuigan et al., "Growth and Properties of Large-Diameter Indium Lattice-Hardened GaAs Crystals" pp. 226-227 Section 2.5.
Ghandhi, S., VLSI Fabrication Principles, Wiley Interscience, N.Y. (1983) p. 330.

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