Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1998-05-12
2000-07-25
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419213, 2042982, 20429823, 20429824, C23C 1434
Patent
active
060932902
ABSTRACT:
The sputtering method of the present invention comprises the steps of forming a plurality of tunnel-like magnetic fluxes on a target, forming an electric field between the target and a belt-like substrate, and conveying the belt-like substrate while reciprocating the plurality of tunnel-like magnetic fluxes at least in the direction of conveying the belt-like substrate, wherein the speed v of conveying the substrate, the distance L in the direction of conveying the belt-like substrate between two adjacent points where the magnetic field of the plurality of tunnel-like magnetic fluxes and the electric field cross each other at a right angle, and the period T of the reciprocating motion of the plurality of tunnel-like magnetic fluxes are controlled so as to L/v=(n+1/2)T wherein n is z-1/16<n<z+1/16 and z is an integer equal to or greater than 0. The present method can solve the problem of the prior art that when a sputtering apparatus is applied to a roll-to-roll system magnetron sputtering apparatus, any part of a belt-like substrate is subjected to sputtering for a different sputtering time, thereby deteriorating the distribution of film thickness in the direction of conveying the belt-like substrate.
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Fujioka Yasushi
Kanai Masahiro
Sakai Akira
Tamura Hideo
Canon Kabushiki Kaisha
Cantelmo Gregg
Nguyen Nam
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