Method of forming gate dielectric films for MOSFETs without gene

Details Method of forming gate dielectric films for MOSFETs without gene Method of forming gate dielectric films for MOSFETs without gene

1997-07-07

1999-07-20

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438769, 438770, H01L 2131

Patent

active

059267410

ABSTRACT:
In a method of forming gate dielectric films, a surface of a Si wafer is first cleaned in an inert gas ambient into a clean state having no naturally oxidized films. Then, after replacing the inert gas ambient with an oxidizing gas containing no nitrogen without exposing the wafer to air, the wafer is heated in the replaced ambient to form a first silicon oxide film on the silicon surface. Then, the ambient is again replaced with an oxidizing gas containing nitrogen, and the wafer is heated in the replaced ambient to form a first oxynitride film between the first silicon oxide film and the silicon. Thereafter, re-oxidation of the wafer is performed in an ambient of oxidizing gas containing no nitrogen to form a second silicon oxide film between the first oxynitride film and the silicon.

REFERENCES:
patent: 5198392 (1993-03-01), Fukuda et al.
patent: 5455204 (1995-10-01), Dobuzinsky et al.
patent: 5461254 (1995-10-01), Tsai et al.
E. Hasegawa, et al., The impact of nitrogen profile engineering on ultra-thin nitrided oxide films for dual-gate CMOS-ULSI, International Electron Devices Meeting Technical Digest, 1995, pp. 327-330.
J. Kim, et al., Effects of Residual Surface Nitrogen on the Dielectric Breakdown Characteristics of Regrown Oxides, vol. 14, No. 5, 1993, pp. 265-267.

Affiliated with

Also associated with

Rating

Method of forming gate dielectric films for MOSFETs without gene does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming gate dielectric films for MOSFETs without gene, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming gate dielectric films for MOSFETs without gene will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1331203