Electronic digital logic circuitry – Clocking or synchronizing of logic stages or gates – Field-effect transistor
Patent
1997-10-29
2000-03-28
Santamauro, Jon
Electronic digital logic circuitry
Clocking or synchronizing of logic stages or gates
Field-effect transistor
326 83, 326 93, 326108, 327162, 327263, H03K 19096
Patent
active
060436840
ABSTRACT:
The integrated circuit includes an input path circuit with an address path having an input buffer for providing address signals to a register. A separate clock path having an input buffer provides a clock signal for clocking the register. The input buffers of both the address path and the clock path include input buffer cells configured to reduce timing delay differences caused by process variations while minimizing current leakage. An exemplary input buffer cell described herein includes a first inverter stage with a pair of NMOS devices connected in series with a PMOS device and a second inverter stage having an additional PMOS device connected along a feedback path around an inverter. The PMOS device along the feedback path operates to assist the pair of NMOS devices to pull a voltage input to the inverter to a high logic state, when an input to the cell is held low, to prevent leakage current through the inverter. The pair of NMOS devices provide a first stage inverter substantially free of process variations. The PMOS device connected in series with the NMOS devices prevents current leakage through the NMOS devices when the input signal is held high.
REFERENCES:
patent: 4429375 (1984-01-01), Kobayashi et al.
patent: 4736123 (1988-04-01), Miyazawa et al.
patent: 4791323 (1988-12-01), Austin
patent: 4857763 (1989-08-01), Sakurai et al.
patent: 4877978 (1989-10-01), Platt
patent: 4893281 (1990-01-01), Hashimoto
patent: 4978905 (1990-12-01), Hoff et al.
patent: 4979166 (1990-12-01), Yamada
patent: 5057715 (1991-10-01), Larsen et al.
patent: 5136182 (1992-08-01), Fawal
patent: 5157284 (1992-10-01), O'Connell et al.
patent: 5305282 (1994-04-01), Choi
patent: 5386153 (1995-01-01), Voss et al.
patent: 5481581 (1996-01-01), Jonas, Jr. et al.
patent: 5493530 (1996-02-01), Lee et al.
patent: 5517138 (1996-05-01), Baltar et al.
patent: 5526320 (1996-06-01), Zagar et al.
patent: 5552723 (1996-09-01), Shigehara et al.
patent: 5587964 (1996-12-01), Rosich et al.
patent: 5625302 (1997-04-01), Covino et al.
patent: 5903174 (1999-05-01), Landry et al.
patent: B14638187 (1993-03-01), Boler et al.
Micron Semiconductor, Inc., MT58LC64K18B2 64K x 18 Synchronous SRAM, Revised Apr. 9, 1993, pp. 1-12.
Paradigm, PDM44018, 64K x 18 Fast CMOS Synchronous Static SRAM with Burst Counter, pp. 6-21 -6-29.
Hitachi Semiconductor, HM67B1864 Series (Target Spec.) 64K x 18 Bits Synchronous Fast Static RAM with Burst Counter and Self-Timed Write, Mar. 31, 1994, Prod. Preview, 10 pgs. total.
Motorola Semiconductor Technical Data, Product Review MCM67B618 64K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst counter and Self-Timed Write, Rev. 3 Jan. 1993, pp. 1-9.
Cypress Semiconductor, Preliminary CY7C1031 CY7C1032 64K x 18 Synchronous Cache RAM, Jan. 1993--Revised May 1993, pp. 1-13.
Cypress Semiconductor Corp.
Santamauro Jon
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