Field effect semiconductor device having improved connections

Details Field effect semiconductor device having improved connections Field effect semiconductor device having improved connections

1997-09-03

1999-11-16

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257384, 257412, H01L 2978

Patent

active

059863129

ABSTRACT:
In a field effect semiconductor device, in order to increase the operation speed and to make the device finer by lowering the sheet resistance, and to lower the production cost by reducing the process steps, the diffusion layer 17 is surrounded by SiO.sub.2 films 16 and 34 covering the tungsten polycide layer 35 provided as the gate electrode and by the SiO.sub.2 film 12 in the device isolating region, and the titanium polycide layer 44 is brought into contact with the entire surface of the diffusion layer 17 while being extended on the SiO.sub.2 films 12 an d 16. Accordingly, a large allowance in aligning the contact hole 25 with respect to the titanium polycide layer 44 can be assured to make the contact compensation ion implantation unnecessary.

REFERENCES:
patent: 5113234 (1992-05-01), Furuta et al.
patent: 5223456 (1993-06-01), Malwah
patent: 5294822 (1994-03-01), Verrett
patent: 5384485 (1995-01-01), Nishida et al.
patent: 5701029 (1997-12-01), Sasaki
patent: 5736770 (1998-04-01), Asai et al.

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