Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-01-06
1999-11-16
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257369, 257296, H01L 2976, H01L 2994, H01L 31113, H01L 31119
Patent
active
059863099
ABSTRACT:
A semiconductor integrated circuit apparatus comprises a semiconductor substrate, a first well region formed in the upper surface of the semiconductor substrate, a first circuit formed in the first well region, first bias voltage supply functions for supplying a bias voltage to the first well region, a second well region formed in the upper surface of the semiconductor substrate such that it does not contact the first well region, a second circuit formed in the second well region, and second bias voltage supply functions for supplying a bias voltage to the second well region.
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Fujimoto Yukihiro
Nogami Kazutaka
Kabushiki Kaisha Toshiba
Meier Stephen D.
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