Semiconductor memory device and method of manufacturing the same

Details Semiconductor memory device and method of manufacturing the same Semiconductor memory device and method of manufacturing the same

1996-06-11

1999-11-16

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257309, 257296, H01L 27108, H01L 2976, H01L 2994

Patent

active

059863005

ABSTRACT:
A lower electrode of a capacitor is provided on a semiconductor substrate. The lower electrode includes an axis portion and a horizontal portion. An upper electrode of the capacitor is provided above the semiconductor substrate to cover the outer surface of the axis portion and the outer surface of the horizontal portion.

REFERENCES:
patent: 4673962 (1987-06-01), Chatterjee et al.
patent: 5023683 (1991-06-01), Yamada
patent: 5155057 (1992-10-01), Dennison et al.
patent: 5166090 (1992-11-01), Kim et al.
patent: 5223448 (1993-06-01), Su
patent: 5247196 (1993-09-01), Kimura
patent: 5284787 (1994-02-01), Ahn
patent: 5346844 (1994-09-01), Cho et al.
patent: 5532956 (1996-07-01), Watanabe
patent: 5629540 (1997-05-01), Roh et al.
patent: 5661065 (1997-08-01), Koga
Novel Stacked Capacitor Cell for 64Mb DRAM by Wakamiya et al., VL Sympo., 1989, pp. 69-70.
"3-Dimensional Stacked Capacitor Cell for 16M and 64M DRAMS" by ENA et al., 1988 IEEE, pp. 592-595.

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