Process for isotropically etching semiconductor devices

Details Process for isotropically etching semiconductor devices Process for isotropically etching semiconductor devices

1993-09-14

1994-10-25

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156657, 156662, 156643, 156646, H01L 2100

Patent

active

053586018

ABSTRACT:
The etchant material of this invention comprises a chemical etchant composition including a halogen-containing feed gas and gaseous carbon dioxide. Typically, the halogen-containing feed gas is a fluorine-containing or a chlorine-containing feed gas, or both a fluorine-containing and a chlorine-containing feed gas. Preferably, the chlorine-containing feed gas comprises chlorine gas or HCl, and the fluorine-containing feed gas comprises SF.sub.6 or NF.sub.3. The fluorine-containing feed gas can also comprise CF.sub.4, or C2F.sub.6.

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patent: 5110411 (1992-05-01), Long

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