Semiconductor device and process and apparatus of fabricating th

Details Semiconductor device and process and apparatus of fabricating th Semiconductor device and process and apparatus of fabricating th

1996-07-03

1999-03-09

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257382, H01L 2976, H01L 2994, H01L 31062

Patent

active

058805001

ABSTRACT:
A semiconductor device having a gate electrode on a Si-substrate through a gate oxide film; a first impurity diffusion region having a conductivity type reversed to a well which will form a part of source and drain regions in the two opposing sides of the gate electrode through gate electrode sidewall dielectric films; a second impurity diffusion region having the same conductivity type as the first impurity diffusion region beneath the gate electrode sidewall dielectric film, touching a channel region directly below the gate electrode and being shallower than the first impurity diffusion region; a titanium silicide film on the gate electrode and the surface of the Si-substrate of the first impurity diffusion region in the two opposing sides of the gate electrode sidewall dielectric film; and a third impurity diffusion region, formed in the first impurity diffusion region, having a higher concentration than the first impurity diffusion region and the same conductivity type as the first and second impurity diffusion region. The above semiconductor device is able to suppress the short-channel effects, and reduce the source-drain parasitic resistance and the source-drain junction leakage current while maintaining a small source-drain capacity.

REFERENCES:
patent: 4949136 (1990-08-01), Jain
patent: 5091763 (1992-02-01), Sanchez
Tsukamoto et al., "Self-aligned titanium silicidation by lamp annealing" Extended Abstracts of the 16th (1984 International) Conference on Solid State Devices and Materials, Kobe, 1984, pp. 47-50.
Moy et al., "Use of thin titanium salicides for submicron VLSI CMOS" Proc. 1st Int. Symp. ULSI Science and Technology, Philadelphia, 1987 (Electrochemical Society, Pennington, 1987), pp. 381-392.
Ogawa et al., "Dependence of thermal stability of the titanium silicide/silicon structure on impurities" Appl. Phys. Lett. (1990) 56(8):725-727.
Georgiou et al., "Thermal stability limits of thin TiSi.sub.2. Effect on submicron line resistance and shallow junction leakage" J. Electrochem. Soc. (1994) 141(5):1351-1356.
Lasky et al., "Comparison of transformation to low-resistivity phase and agglomeration of TiSi.sub.2 and CoSi.sub.2 " IEEE Transactions on Electron Devices (1991) 38(2):262-268.

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