System for enhancing the performance of a circuit by reducing th

Details System for enhancing the performance of a circuit by reducing th System for enhancing the performance of a circuit by reducing th

1997-08-25

1999-07-20

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

059259132

ABSTRACT:
Generally, decreasing the length of the channel in a CMOS transistor increases the speed of the transistor. However, the degree that the channel can be minimized is limited due to Hot Carrier Injection ("HCI"), which is related to the drain to source voltage and channel length. The present invention increases the speed of a circuit by decreasing the channel length of subset of transistors in the circuit. The subset is chosen by identifying instances where more than one transistor in series is used to discharge a capacitance. Those transistors are subject to lower drain to source voltages; therefore, the channel length can be reduced without suffering from the effects of HCI.

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