Semiconductor apparatus having a conductive sidewall structure

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257336, 257408, 257640, 257641, H01L 2976, H01L 2994, H01L 2358

Patent

active

059259124

ABSTRACT:
In an active area on a semiconductor substrate is formed a MOS transistor including a gate insulating film, gate electrode, an insulating film formed on the entire surface of the substrate, a conductive side wall formed on the side surfaces of the gate electrode with the insulating film interposed therebetween, low concentration source/drain regions and high concentration source/drain regions. The high concentration drain region and the conductive side wall are electrically conducting to each other via a second interconnection within a second contact hole. In the usage of the MOS transistor, the conductive side wall is at the same potential as the drain voltage, thereby suppressing the degradation due to a hot carrier. In addition, since there is no need to provide an alignment margin between the second contact hole and the gate electrode, the area of the drain region is decreased. Thus, the invention provides a semiconductor apparatus which has a smaller active area and is suitable to refinement and a higher density, and a production method for the same.

REFERENCES:
patent: 5324974 (1994-06-01), Liao

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor apparatus having a conductive sidewall structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor apparatus having a conductive sidewall structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor apparatus having a conductive sidewall structure will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1323990

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.