Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-03-26
1999-07-20
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257336, 257408, 257640, 257641, H01L 2976, H01L 2994, H01L 2358
Patent
active
059259124
ABSTRACT:
In an active area on a semiconductor substrate is formed a MOS transistor including a gate insulating film, gate electrode, an insulating film formed on the entire surface of the substrate, a conductive side wall formed on the side surfaces of the gate electrode with the insulating film interposed therebetween, low concentration source/drain regions and high concentration source/drain regions. The high concentration drain region and the conductive side wall are electrically conducting to each other via a second interconnection within a second contact hole. In the usage of the MOS transistor, the conductive side wall is at the same potential as the drain voltage, thereby suppressing the degradation due to a hot carrier. In addition, since there is no need to provide an alignment margin between the second contact hole and the gate electrode, the area of the drain region is decreased. Thus, the invention provides a semiconductor apparatus which has a smaller active area and is suitable to refinement and a higher density, and a production method for the same.
REFERENCES:
patent: 5324974 (1994-06-01), Liao
Arai Masatoshi
Nakabayashi Takashi
Loke Steven H.
Matsushita Electric Industrial Co.,Ltd.
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