MOS circuit configuration for switching high voltages on a semic

Details MOS circuit configuration for switching high voltages on a semic MOS circuit configuration for switching high voltages on a semic

1997-07-24

1999-07-20

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257314, H01L 29772

Patent

active

059259051

ABSTRACT:
The MOS circuit configuration allows switching high voltages on a semiconductor chip. In order to switch a high negative voltage, for example as a programming voltage on the word line of a flash-memory, two circuit variants are given which are formed only with transistors of the same conductivity type as the substrate. The substrate and the transistors formed in the well are p-conductive. In this way it is possible to dispense with deep insulating wells which require special technology.

REFERENCES:
patent: 5077691 (1991-12-01), Haddad et al.
patent: 5335200 (1994-08-01), Coffman et al.
patent: 5371705 (1994-12-01), Nakayama et al.
A 60nc 16Mb Flash EEPROM with Program and Erase Sequence Controller (Nakayama et al.), 1991 IEEE International Solid-State Circuits Conference, pp. 260, 261 and 326.

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