Non-volatile semiconductor memory device

Details Non-volatile semiconductor memory device Non-volatile semiconductor memory device

1994-09-06

1996-09-10

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

365218, 365182, H01L 29788

Patent

active

055548687

ABSTRACT:
There is a case where a memory cell brought to an over-erase (depletion) state if the erasing time is too long, for example, in an electrically erasable non-volatile semiconductor memory device. In this case, the transistor constituting the memory cell is always in ON state and causes erroneous operation. Therefore, it is detected whether there is any memory cell in the over-erase state or not after erasing in each memory cell, and if any memory cell is detected being in the over-erase state, tunnel writing is performed in each memory cell. Specifically, electrons are injected into the floating gate of the transistor constituting each memory cell by a tunnel phenomenon. This causes the memory cell in the over-erase state to recover to a normal state. Detection of the over-erase state and recovery from it are performed by an over-erase correcting circuit 72.

REFERENCES:
patent: 4841482 (1989-06-01), Kriefels et al.
patent: 5122985 (1992-06-01), Santin
patent: 5132935 (1992-07-01), Ashmore, Jr.
patent: 5237535 (1993-08-01), Mielke et al.
patent: 5313432 (1994-05-01), Lin et al.
"A 90-ns One-Million Erase/Program Cycle 1-Mbit Flash Memory" IEEE Journal of Solid-State Circuits. vol. 24, No. 5, Oct. 1989.

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