Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1996-08-01

1999-03-09

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438166, 438487, 438755, 148DIG16, H01L 21268

Patent

active

058799745

ABSTRACT:
Using a nickel element which is a metal element for promoting crystallized of silicon, an amorphous silicon film is crystallization into a crystalline silicon film, and then a thin film transistor (TFT) is produced by using the crystalline silicon film. That is, a solution containing nickel (for example nickel acetate solution) which promotes crystallization of silicon is applied in contact with a surface of an amorphous silicon through the spin coat method. Then the heating treatment is performed to crystallize the amorphous silicon film into the crystalline silicon film. In the state, nickel silicide components are removed using a solution containing hydrofluoric acid, hydrogen peroxide and water.

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