Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1997-10-09
1999-11-16
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419212, 20419232, 2041922, C23C 1434
Patent
active
059851040
ABSTRACT:
An improved process is provided for making a milling mask for milling notches in a first pole piece of a write head. The making of the milling mask involves two process steps, namely: (1) sputter depositing a layer of protective material on the top and side walls of a second pole tip and on flat portions of the first pole piece and (2) chemically etching the protective layer to remove the side wall portions of the protective layer leaving flat portions of the protective layer which constitute the milling mask. The etch rate of the side wall portions of the protective layer, as compared to the flat portions of the protective layer, are significantly increased by sputter depositing the protective layer in the presence of a reactive gas such as oxygen or nitrogen. The etch rate can be increased from 7:1 for a nonreactive gas such as argon to 24:1 with an argon and reactive gas mixture at a sputtering pressure of 18 mT.
REFERENCES:
patent: 4428812 (1984-01-01), Sproul
patent: 5322605 (1994-06-01), Yamanishi
patent: 5556520 (1996-09-01), Latz
Cantelmo Gregg
International Business Machines - Corporation
Nguyen Nam
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