Method of manufacturing a semiconductor device having a semicond

Details Method of manufacturing a semiconductor device having a semicond Method of manufacturing a semiconductor device having a semicond

1994-09-22

1996-09-10

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566491, 1566571, 15665911, 437238, 216 39, 216 41, H01L 2100

Patent

active

055542565

ABSTRACT:
A method of manufacturing a semiconductor device comprising a semiconductor body (1) with field insulation regions (14) formed by grooves (10; 24) filled with an insulating material (13) is disclosed. The grooves (10; 24) are etched into the semiconductor body (1) with the use of an etching mask (9) formed on an auxiliary layer (6) provided on a surface (5) of the semiconductor body (1). The auxiliary layer (6) is removed from the portion (11) of the surface (5) situated next to the etching mask (9) before the grooves (10; 24) are etched into the semiconductor body (1), and the auxiliary layer (6) is removed from the edge (12) of the surface (5) situated below the etching mask (9) after the grooves (10; 24) have been etched into the semiconductor body. Furthermore, a layer (13) of the insulating material is deposited on the semiconductor body (1), whereby the grooves (10; 24) are filled and the edge (12) of the surface (5) situated below the etching mask (9) is covered. Then the semiconductor body is subjected to a treatment whereby material is taken off parallel to the surface (5) down to the auxiliary layer (6), and finally the remaining portion of the auxiliary layer (6) is removed. Field insulation regions are thus formed which extend over an edge (12) of the active regions (15) surrounded by the field insulation regions (14) with a strip (18) which has no overhanging edge.

REFERENCES:
patent: 4892614 (1990-01-01), Chapman et al.
patent: 5281550 (1994-01-01), Ducreux
patent: 5346584 (1994-09-01), Nasr et al.
patent: 5346862 (1994-09-01), Schleicher et al.

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device having a semicond does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device having a semicond, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device having a semicond will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1317987