MOS transistor with high breakdown voltage

Details MOS transistor with high breakdown voltage MOS transistor with high breakdown voltage

1991-11-07

1993-03-02

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257335, 257336, 257344, 257401, H01L 2702

Patent

active

051914018

ABSTRACT:
A semiconductor device comprises a semiconductor substrate of a first conductivity type, a first well of a second conductivity type formed on the semiconductor substrate of the first conductivity type, a first impurity diffusion layer of the first conductivity type formed on the well without contacting the semiconductor substrate, a second impurity diffusion layer of the second conductivity type which surrounds the first impurity diffusion layer and has an impurity concentration which is higher than that of the first impurity diffusion layer, a third impurity diffusion layer of the first conductivity type formed within the second impurity diffusion layer so as to contact neither the semiconductor substrate nor the first impurity diffusion layer, a source electrode connected to both the second impurity diffusion layer and the third impurity diffusion layer, a gate electrode which is formed between the first impurity diffusion layer and the third impurity diffusion layer and formed on the second impurity diffusion layer so as to interpose an insulation film therebetween, a drain electrode connected to the first impurity diffusion layer, and a wiring layer extracted from the drain electrode outside the semiconductor substrate.

REFERENCES:
patent: 3787962 (1974-01-01), Yoshida et al.
patent: 4143392 (1979-03-01), Mylroie
patent: 4300150 (1981-11-01), Colak
patent: 4422089 (1983-12-01), Vaes et al.
patent: 4626879 (1986-12-01), Colak
patent: 4860072 (1989-08-01), Zommer
patent: 4881112 (1989-11-01), Matsushita
Proceedings of the Symposium on High Voltage and Smart Power Devices, W. G. Meyer et al., AT&T-Ball Labe, pp. 60-69.
"D/CMOS Technology: Smartpower Processes that Solve Difference Circuit Design Problems," R. A. Blanchard et al., ELECTRO 86, pp. 73-77, 1986.

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