Plasma etching process

Details Plasma etching process Plasma etching process

Filed on

1980-02-22

Date issued

1981-03-10

Examiner

Powell, William A.

Patent Class

Adhesive bonding and miscellaneous chemical manufacture

SubClass

Delaminating processes adapted for specified product

SubSubClass

Delaminating in preparation for post processing recycling step

Other Related Categories

156646, 156662, 204192E, 252 791, H01L 21306

Type

Patent

Status

active

Patent number

042552303

Description

ABSTRACT:
In an improved process for the etching of polysilicon substrates, a polysilicon substrate is exposed to plasmas of carbon tetrachloride, chlorinated gas, fluorinated gas or a gas capable of generating both chlorinated and fluorinated plasma species. The combination of a chlorinated and fluorinated etching species substantially reduces undercutting of polysilicon substrates. Improved uniformity of polysilicon etching is also achieved.

REFERENCES:
patent: 4069096 (1978-01-01), Reinberg et al.
patent: 4094722 (1978-06-01), Yamamoto et al.
patent: 4174251 (1979-11-01), Paschke

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