Etching indium tin oxide

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156646, 156656, B44C 122

Patent

active

050322214

ABSTRACT:
ITO is etched by a plasma containing CH.sub.3. gas.

REFERENCES:
patent: 4818326 (1989-04-01), Liu et al.
patent: 4878993 (1989-11-01), Rossi et al.
"A Novel Process for Reactive Ion Etching on InP, using CH.sub.4 /H.sub.2 ", by V. Niggebrugge, M. Klug and G. Garns, Inst. Phys. Conf. Ser. No. 79: Chapter 6, 1985.

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