Method of crucible-freeze zone-melting a semiconductor rod and a

Details Method of crucible-freeze zone-melting a semiconductor rod and a Method of crucible-freeze zone-melting a semiconductor rod and a

1978-07-10

1979-07-24

Envall, Jr., R. N.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

13DIG1, 156601, H05B 508, B01J 1708

Patent

active

041623673

ABSTRACT:
Method of crucible-free zone-melting a semiconductor rod which includes monitoring a melting zone formed in and traveling through a semiconductor rod surrounded by an induction heating coil, producing a respective signal corresponding to values of the actual diameters d of the semiconductor rod at a crystallization interface of the melting zone, comparing the signals corresponding to the actual diameter values d with a signal corresponding to a nominal diameter value d.sub.s so as to produce a signal corresponding to a respective first control deviation .DELTA.d, continuously combining the signals corresponding to the actual diameter values d and the signal corresponding to the respective first control deviation .DELTA.d to form respective signals corresponding to a new nominal diameter value d.sub.s *, respectively, in accordance with the relationships:

REFERENCES:
patent: 3243509 (1966-03-01), Stut
patent: 3814827 (1974-06-01), Stut
patent: 4080172 (1978-03-01), Fricke et al.

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