Semiconductor memory device having improved isolation between el

Details Semiconductor memory device having improved isolation between el Semiconductor memory device having improved isolation between el

1996-01-26

1998-04-07

Dang, Trung

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438240, 438253, 438974, H01L 2120

Patent

active

057364494

ABSTRACT:
With recent decreases in the size of semiconductor memories, isolation problems typically arise during fabrication of a capacitor for a high-capacity semiconductor memory device. To overcome this, arrangements are provided to improve the isolation between capacitor elements even if those elements are extremely close together. For example, if a material such as platinum is used as a capacitor bottom electrode, a thin layer of titanium oxide can be deposited before forming the platinum, to provide a structure in which the titanium oxide is on the bottom portion of the trench. A high-dielectric-constant insulator is then formed over that structure by the Chemical Vapor Deposition. The high-dielectric-constant insulator has a composition which satisfies the stoichiometric composition over the platinum and which has more titanium atoms than those of the stoichiometric composition on the trench bottom. The resulting non-stoichiometric composition layer formed on the trench bottom has a low dielectric constant and a high insulation to maintain electric insulation between adjoining bottom capacitor electrodes. Because of a low crystallization, moreover, a layer having a planarized morphology is formed.

REFERENCES:
patent: 5504041 (1996-04-01), Summerfelt
patent: 5506166 (1996-04-01), Sandhu et al.
patent: 5508221 (1996-04-01), Kamiyama
patent: 5605858 (1997-02-01), Nishioka et al.

Affiliated with

Also associated with

Rating

Semiconductor memory device having improved isolation between el does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device having improved isolation between el, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device having improved isolation between el will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-12828