Single isolation cell for DC stable memory

Static information storage and retrieval – Systems using particular element – Semiconductive

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G11C 1134

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active

044096739

ABSTRACT:
A fully selectable static memory cell formed in a single isolation region comprises a pair of word lines, an SCR latch including an NPN device and an associated parasitic PNP device connected between the word lines, and a pair of bit lines, each of which is connected to the NPN device and the PNP device either directly or through a Schottky diode or an additional transistor device.

REFERENCES:
patent: 3697962 (1972-10-01), Beausoleil
patent: 3918033 (1975-11-01), Case et al.
Farley et al., "Integrated Static SCR Memory Cell", IBM Technical Disclosure Bulletin, vol. 22, No. 1, Jun. 1979, pp. 135, 136.
Malaviya, "Single-Device DC Stable Memory Cell", IBM Technical Disclosure Bulletin, vol. 20, No. 9, Feb. 1978, pp. 3492-3494.

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