Method for manufacturing a semiconductor device utilizing an ano

Details Method for manufacturing a semiconductor device utilizing an ano Method for manufacturing a semiconductor device utilizing an ano

1995-06-07

1998-04-07

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438158, 438466, H01L 2184, H01L 21326, H01L 21479

Patent

active

057364346

ABSTRACT:
An anodic oxide containing impurities at a low concentration and thereby improved in film quality, and a process for fabricating the same. The process comprises increasing the current between a metallic thin film and a cathode until a voltage therebetween reaches a predetermined value, and maintaining the voltage at the predetermined value thereafter.

REFERENCES:
patent: 2918416 (1959-12-01), Taylor
patent: 3020219 (1962-02-01), Franklin et al.
patent: 5545571 (1996-08-01), Yamazaki et al.
patent: 5576231 (1996-11-01), Konuma et al.
patent: 5580800 (1996-12-01), Zhang et al.
patent: 5595638 (1997-01-01), Konuma et al.

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