Static information storage and retrieval – Read/write circuit – Differential sensing
Patent
1993-04-28
1994-09-27
Yoo, Do Hyun
Static information storage and retrieval
Read/write circuit
Differential sensing
365185, 36518907, 365201, G11C 1600, G11C 1300
Patent
active
053512146
ABSTRACT:
A circuit for the detection of current leaks on a bit line of a memory (such as an EPROM or flash EPROM), which includes a current generator and circuitry for applying zero volts to the gates of all the cells f the bit line. The detection information is delivered by a comparison circuit. It corresponds to the result of the comparison between the test current and the current flowing in the bit line. Advantageously, the detection circuit is incorporated into the read circuit of the memory. Also disclosed is an associated detection method, and a memory circuit which includes such a detection circuit.
REFERENCES:
patent: 4800332 (1989-01-01), Hutchins
patent: 4841482 (1989-06-01), Kreifels et al.
patent: 5117394 (1992-05-01), Amin et al.
patent: 5142496 (1992-08-01), Van Buskirk
patent: 5157626 (1992-10-01), Watanabe
patent: 5218570 (1993-06-01), Pascucci et al.
patent: 5241505 (1993-08-01), Hashimoto
IBM Technical Disclosure Bulletin, vol. 33, No. 5, Oct. 1990, pp. 389-390, "Bit Line Leakage Screen for Directory Chips".
Groover Robert
SGS-Thomson Microelectronics S.A.
Yoo Do Hyun
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