Method for depositing very thin PECVD SiO.sub.2 in 0.5 micron an

Details Method for depositing very thin PECVD SiO.sub.2 in 0.5 micron an Method for depositing very thin PECVD SiO.sub.2 in 0.5 micron an

1995-11-16

1998-04-07

Nguyen, Nam

Fishing, trapping, and vermin destroying

437235, 427578, 427579, H01L 2102, H01L 2177

Patent

active

057364230

ABSTRACT:
A very thin (less than 350 angstrom) layer of silicon dioxide (SiO.sub.2) is produced using plasma-enhanced chemical vapor deposition (PECVD) by substantially increasing the time duration of pre-coat and soak time steps of the PECVD process and substantially reducing the flow of silane (SiH.sub.4), the applied high frequency power and the applied pressure in the PECVD process.

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patent: 4877641 (1989-10-01), Dory
patent: 5040046 (1991-08-01), Chhabra et al.
patent: 5264712 (1993-11-01), Murata et al.
patent: 5284789 (1994-02-01), Mori et al.
patent: 5362526 (1994-11-01), Wang et al.

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