Semiconductor memory device

Static information storage and retrieval – Systems using particular element – Ferroelectric

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Details

365149, 36523003, G11C 1122

Patent

active

061512427

ABSTRACT:
A semiconductor memory device comprises a block unit wherein a plurality of nonvolatile memory cells formed by connecting cell transistors and ferroelectric capacitors in parallel are connected in series, an amplifying circuit having an input end connected to one end of the block unit and an output terminal connected to a bitline, in which the block unit and the amplifying circuit constitute a cell block, and a plurality of cell blocks are disposed to constitute a memory cell array.

REFERENCES:
patent: 5424976 (1995-06-01), Cuppens
patent: 5903492 (1999-05-01), Takashima
patent: 5966318 (1999-10-01), Ramer et al.

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