Ferroelectric nonvolatile memory and oxide multi-layered structu

Details Ferroelectric nonvolatile memory and oxide multi-layered structu Ferroelectric nonvolatile memory and oxide multi-layered structu

1996-05-31

2000-11-21

Zarabian, A.

Static information storage and retrieval

Systems using particular element

Ferroelectric

257295, G11C 1122

Patent

active

061512400

ABSTRACT:
A ferroelectric memory includes a silicon substrate having a buffer layer on the substrate and a conductive oxide thin film on the buffer layer. A bismuth based layered ferroelectric oxide thin film is formed on the conductive oxide and a further conductive layer is formed on the ferroelectric layer. In one embodiment, the buffer layer is substantially lattice matched with the silicon substrate, the conductive oxide thin film is substantially lattice matched with the buffer layer, and the bismuth-based layered ferroelectric oxide thin film is substantially lattice matched with the conductive oxide thin film. Additionally, the invention includes the use of a superlattice structure for the ferroelectric layer.

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